N-channel power MOSFET featuring 100V drain-source breakdown voltage and 25A continuous drain current. Offers low on-resistance of 0.027 Ohm typical, with a maximum of 35mR. Designed for through-hole mounting in a TO-220FP package, this component boasts fast switching speeds with turn-on delay of 9.8ns and fall time of 4.6ns. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 25W.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF25N10F7 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 4.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.4mm |
| Input Capacitance | 920pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VII |
| Turn-Off Delay Time | 14.8ns |
| Turn-On Delay Time | 9.8ns |
| Weight | 0.01164oz |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF25N10F7 Datasheet
Download the complete datasheet for Stmicroelectronics STF25N10F7 to view detailed technical specifications.
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