N-channel power MOSFET featuring 500V drain-source breakdown voltage and 22A continuous drain current. Offers a low 140mΩ maximum drain-source on-resistance. Designed for through-hole mounting in TO-220-3 packages, with a maximum power dissipation of 40W. Includes a 25V gate-source voltage rating and operates within a temperature range of -55°C to 150°C.
PackageTO-220-3
Current Rating22A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF25NM50N technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
22A
Current Rating
22A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
140mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
140mR
Fall Time
22ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
2.565nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
40W
Rds On Max
140mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Threshold Voltage
3V
Turn-Off Delay Time
75ns
DC Rated Voltage
550V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF25NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STF25NM50N to view detailed technical specifications.
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