N-channel power MOSFET featuring 600V drain-source breakdown voltage and 21A continuous drain current. Offers a low 160mΩ maximum drain-source on-resistance at a nominal 3V gate-source voltage. Designed for through-hole mounting in a TO-220-3 package, this RoHS compliant component boasts a 40W maximum power dissipation and operates within a -55°C to 150°C temperature range. Key switching parameters include a 24ns fall time and 94ns turn-off delay.
PackageTO-220-3
Current Rating20A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF25NM60N technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
21A
Current Rating
20A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
170mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
160mR
Dual Supply Voltage
600V
Fall Time
24ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
2.4nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Through Hole
Nominal Vgs
3V
On-State Resistance
170mR
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
40W
Radiation Hardening
No
Rds On Max
160mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Termination
Through Hole
Threshold Voltage
3V
Turn-Off Delay Time
94ns
Turn-On Delay Time
24.5ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF25NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STF25NM60N to view detailed technical specifications.
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