N-channel power MOSFET featuring 600V drain-to-source breakdown voltage and 21A continuous drain current. Offers 160mΩ typical drain-to-source resistance and 40W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, this component includes a fast diode and operates within a -55°C to 150°C temperature range. RoHS compliant with a 4ns fall time and 60ns turn-on delay.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power40W
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Technical Specifications
Stmicroelectronics STF25NM60ND technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
21A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
600V
Fall Time
40ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
2.4nF
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
40W
Radiation Hardening
No
Rds On Max
160mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
FDmesh™
Threshold Voltage
4V
Turn-Off Delay Time
50ns
Turn-On Delay Time
60ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF25NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STF25NM60ND to view detailed technical specifications.
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