N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 21A continuous drain current. This through-hole component offers a low 0.145 Ohm typical drain-source resistance and is housed in a TO-220FP package. Designed for efficient switching, it exhibits fast switching characteristics with turn-on delay of 22ns and fall time of 27.5ns. Maximum power dissipation is 35W, with an operating temperature range of -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF26NM60ND technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
21A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
145mR
Drain to Source Voltage (Vdss)
600V
Fall Time
27.5ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
1.817nF
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
35W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
175mR
Series
FDmesh™ II
Turn-Off Delay Time
69ns
Turn-On Delay Time
22ns
Weight
0.01164oz
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF26NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STF26NM60ND to view detailed technical specifications.
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