N-channel power MOSFET featuring 600V drain-source breakdown voltage and 24A continuous drain current. This through-hole component offers a low 0.135 Ohm typical drain-source resistance at 10Vgs. Designed for high efficiency, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 35W. The TO-220FP package ensures robust thermal performance.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power30W
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Technical Specifications
Stmicroelectronics STF28N60M2 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
24A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
120mR
Drain to Source Voltage (Vdss)
600V
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
1.37nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
35W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
30W
Rds On Max
150mR
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
100ns
Turn-On Delay Time
14.5ns
Weight
0.01164oz
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF28N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STF28N60M2 to view detailed technical specifications.
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