N-channel SuperMESH™ Power MOSFET, 600V drain-source breakdown voltage, 2A continuous drain current, and 4.8 Ohm maximum drain-source on-resistance. Features Zener protection, a TO-220FP package for through-hole mounting, and a maximum power dissipation of 20W. Operates from -55°C to 150°C with a 3.75V threshold voltage. RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power20W
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Technical Specifications
Stmicroelectronics STF2HNK60Z technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
2A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
4.8R
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
4.8R
Fall Time
50ns
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
280pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
20W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
20W
Radiation Hardening
No
Rds On Max
4.8R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
13ns
Turn-On Delay Time
10ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF2HNK60Z Datasheet
Download the complete datasheet for Stmicroelectronics STF2HNK60Z to view detailed technical specifications.
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