N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 2A continuous drain current. This through-hole component offers a typical on-resistance of 3.5 Ohms, with a maximum of 4.5 Ohms, and a 30V gate-source voltage rating. Designed for high-temperature operation up to 150°C, it includes a 95pF input capacitance and fast switching times with 8ns turn-on and 19ns turn-off delays. Packaged in a TO-220FP housing, this RoHS compliant device supports a maximum power dissipation of 20W.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power20W
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Technical Specifications
Stmicroelectronics STF2N80K5 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
2A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
3.5R
Drain to Source Voltage (Vdss)
800V
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
95pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
20W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
20W
Rds On Max
4.5R
RoHS Compliant
Yes
Series
SuperMESH5™
Turn-Off Delay Time
19ns
Turn-On Delay Time
8ns
Weight
0.01164oz
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF2N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STF2N80K5 to view detailed technical specifications.
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