
N-CHANNEL Power MOSFET featuring 650V drain-source breakdown voltage and 22A continuous drain current. Offers a low 139mR drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, this RoHS compliant component boasts a maximum power dissipation of 30W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 10ns fall time and 50ns turn-on/turn-off delay times.
Stmicroelectronics STF30N65M5 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 139mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 139MR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 2.88nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 139mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 50ns |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STF30N65M5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
