N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 28A continuous drain current. Offers a low 0.09 Ohm typical drain-source on-resistance. Encased in a TO-220FP package for through-hole mounting, this device operates within a temperature range of -55°C to 150°C and supports up to 35W power dissipation. RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power30W
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Technical Specifications
Stmicroelectronics STF34N65M5 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
28A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
110mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
110MR
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
2.59nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
35W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
30W
Radiation Hardening
No
Rds On Max
110mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
59ns
Turn-On Delay Time
59ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF34N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STF34N65M5 to view detailed technical specifications.
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