N-channel Power MOSFET featuring 600V drain-source voltage and 29A continuous drain current. This TO-220FP packaged device offers a low 110mΩ drain-source on-resistance and 650V breakdown voltage. Optimized for fast switching with turn-on delay of 30ns and fall time of 61.8ns, it includes an integrated fast diode. Maximum power dissipation is 190W, with operation from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STF34NM60ND technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 105MR |
| Fall Time | 61.8ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 2.785nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 111ns |
| Turn-On Delay Time | 30ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF34NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STF34NM60ND to view detailed technical specifications.
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