N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 27A continuous drain current. Offers a low 98mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, this RoHS compliant component boasts a maximum power dissipation of 40W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 16ns fall time and 60ns turn-on/off delay times.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power40W
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Technical Specifications
Stmicroelectronics STF35N65M5 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
27A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
98mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
98MR
Fall Time
16ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
3.75nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
40W
Radiation Hardening
No
Rds On Max
98mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
60ns
Turn-On Delay Time
60ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF35N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STF35N65M5 to view detailed technical specifications.
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