N-channel Power MOSFET featuring 620V drain-source breakdown voltage and 2.5A continuous drain current. This through-hole component offers a low 3-ohm drain-source on-resistance and a maximum power dissipation of 20W. It operates within a temperature range of -55°C to 150°C and is housed in a TO-220-3 package. Key switching characteristics include a 9ns turn-on delay and a 27ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power20W
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Technical Specifications
Stmicroelectronics STF3LN62K3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
620V
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
620V
Drain-source On Resistance-Max
3R
Fall Time
27ns
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
386pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
20W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
20W
Radiation Hardening
No
Rds On Max
3R
Reach SVHC Compliant
No
RoHS Compliant
No
Series
SuperMESH3™
Threshold Voltage
3.75V
Turn-Off Delay Time
30ns
Turn-On Delay Time
9ns
Width
4.6mm
Compliance
RoHS
Not CompliantNo
Datasheet
Stmicroelectronics STF3LN62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STF3LN62K3 to view detailed technical specifications.
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