N-channel Power MOSFET featuring 620V drain-source breakdown voltage and 2.7A continuous drain current. This SuperMESH3™ device offers a low 2.2 Ohm typical drain-source resistance and is housed in a TO-220FP package for through-hole mounting. Key electrical characteristics include a 385pF input capacitance and fast switching times with a 9ns turn-on delay and 22ns turn-off delay. Maximum power dissipation is rated at 45W, with a maximum operating temperature of 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power45W
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Technical Specifications
Stmicroelectronics STF3N62K3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
2.7A
Drain to Source Breakdown Voltage
620V
Drain to Source Resistance
2.5R
Drain to Source Voltage (Vdss)
620V
Fall Time
15.6ns
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
385pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
20W
Mount
Through Hole
Nominal Vgs
3.75V
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
45W
Radiation Hardening
No
Rds On Max
2.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
22ns
Turn-On Delay Time
9ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF3N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STF3N62K3 to view detailed technical specifications.
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