N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 2.5A continuous drain current. Offers a typical 2.8 Ohm drain-source resistance, with a maximum of 3.5 Ohm. Designed for through-hole mounting in a TO-220FP package, this component boasts fast switching characteristics with a 25ns fall time. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 20W.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF3N80K5 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 2.8R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.4mm |
| Input Capacitance | 130pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 3.5R |
| RoHS Compliant | Yes |
| Series | SuperMESH5™ |
| Turn-Off Delay Time | 20.5ns |
| Turn-On Delay Time | 8.5ns |
| Weight | 0.01164oz |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF3N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STF3N80K5 to view detailed technical specifications.
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