
N-CHANNEL POWER MOSFET featuring 200V drain-source breakdown voltage and 40A continuous drain current. This through-hole component offers a low 45mΩ drain-source on-resistance and a maximum power dissipation of 40W. Operating across a temperature range of -55°C to 150°C, it boasts fast switching characteristics with a 20ns turn-on delay and 22ns fall time. Available in TO-220-3 packaging, this RoHS compliant device is designed for demanding power applications.
Stmicroelectronics STF40N20 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 40A |
| Current Rating | 40A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 45mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 74ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 200V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STF40N20 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.