N-channel MOSFET featuring 200V drain-source breakdown voltage and 40A continuous drain current. Offers low 45mΩ drain-source on-resistance at Vgs=10V. Designed for through-hole mounting in TO-220-3 packages, with a maximum power dissipation of 40W. Includes fast switching characteristics with typical turn-on delay of 20ns and fall time of 22ns.
PackageTO-220-3
Current Rating40A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF40NF20 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
40A
Current Rating
40A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
45mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
45MR
Fall Time
22ns
Gate to Source Voltage (Vgs)
20V
Height
16.4mm
Input Capacitance
2.5nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
40W
Radiation Hardening
No
Rds On Max
45mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
3V
Turn-Off Delay Time
74ns
Turn-On Delay Time
20ns
DC Rated Voltage
200V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF40NF20 Datasheet
Download the complete datasheet for Stmicroelectronics STF40NF20 to view detailed technical specifications.
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