N-channel SuperMESH3™ Power MOSFET, 620V drain-source breakdown voltage, 3.8A continuous drain current, and 2 Ohm max drain-source on-resistance. Features include 10ns turn-on delay, 29ns turn-off delay, and 19ns fall time. Packaged in a TO-220-3 through-hole mount, this RoHS compliant component operates from -55°C to 150°C with 25W max power dissipation.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF4N62K3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
3.8A
Drain to Source Breakdown Voltage
620V
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
620V
Drain-source On Resistance-Max
2R
Fall Time
19ns
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
550pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
2R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH3™
Threshold Voltage
3.75V
Turn-Off Delay Time
29ns
Turn-On Delay Time
10ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF4N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STF4N62K3 to view detailed technical specifications.
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