N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 3A continuous drain current. This through-hole component offers a low 2.7 Ohm drain-source on-resistance and a maximum power dissipation of 20W. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching characteristics with turn-on delay of 9.5ns and fall time of 22ns. Packaged in TO-220-3, this RoHS compliant device is ideal for power switching applications.
PackageTO-220-3
Current Rating3A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF4NK50ZD technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 2.7R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 310pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| Rds On Max | 2.7R |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 9.5ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF4NK50ZD Datasheet
Download the complete datasheet for Stmicroelectronics STF4NK50ZD to view detailed technical specifications.
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