N-channel SuperMESH3™ Power MOSFET featuring 525V drain-source breakdown voltage and 4.4A continuous drain current. Offers a low 1.5 Ohm maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, with a maximum power dissipation of 25W. Key switching characteristics include a 9ns turn-on delay and 16ns fall time. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF5N52K3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
4.4A
Drain to Source Breakdown Voltage
525V
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
525V
Drain-source On Resistance-Max
1.5R
Fall Time
16ns
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
545pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
1.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH3™
Threshold Voltage
3.75V
Turn-Off Delay Time
29ns
Turn-On Delay Time
9ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF5N52K3 Datasheet
Download the complete datasheet for Stmicroelectronics STF5N52K3 to view detailed technical specifications.
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