N-channel Power MOSFET featuring 620V drain-source breakdown voltage and 4.2A continuous drain current. This SuperMESH3™ device offers a low 1.6 Ohm maximum drain-source on-resistance and is housed in a TO-220FP package for through-hole mounting. Key electrical characteristics include a 3.75V threshold voltage, 680pF input capacitance, and fast switching times with a 12ns turn-on delay and 21ns fall time. Operating temperature range spans -55°C to 150°C with a maximum power dissipation of 25W.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF5N62K3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
4.2A
Drain to Source Breakdown Voltage
620V
Drain to Source Resistance
1.6R
Drain to Source Voltage (Vdss)
620V
Drain-source On Resistance-Max
1.6R
Fall Time
21ns
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
680pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
1.6R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH3™
Threshold Voltage
3.75V
Turn-Off Delay Time
40ns
Turn-On Delay Time
12ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF5N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STF5N62K3 to view detailed technical specifications.
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