N-Channel Power MOSFET featuring 525V drain-to-source breakdown voltage and 5A continuous drain current. This through-hole component offers a low 1.2-ohm drain-to-source resistance (Rds On Max) and a 3.75V threshold voltage. Designed for efficient switching, it exhibits a 10ns turn-on delay and 31ns turn-off delay, with an 18ns fall time. Maximum power dissipation is 25W, operating within a -55°C to 150°C temperature range. Packaged in TO-220AB or TO-220FP with 3 pins, this RoHS compliant device is suitable for power applications.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF6N52K3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
525V
Drain to Source Resistance
1R
Drain to Source Voltage (Vdss)
525V
Fall Time
18ns
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
670pF
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
1.2R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH3™
Threshold Voltage
3.75V
Turn-Off Delay Time
31ns
Turn-On Delay Time
10ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF6N52K3 Datasheet
Download the complete datasheet for Stmicroelectronics STF6N52K3 to view detailed technical specifications.
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