NPN Bipolar Junction Transistor (BJT) for power applications. Features a 3A continuous collector current and 30V collector-emitter breakdown voltage. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Packaged in a SOT-89 surface-mount case, this RoHS compliant component operates from -65°C to 150°C with a maximum power dissipation of 1.4W.
Frequency100MHz
PackageSOT-89
Current Rating3A
MountingSurface Mount
Quick Jump:
Technical Specifications
Stmicroelectronics STF724 technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
1.1V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
1.1V
Current Rating
3A
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
100MHz
Height
1.6mm
hFE Min
100
Lead Free
Lead Free
Length
4.6mm
Max Collector Current
3A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STF724
Termination
SMD/SMT
Transition Frequency
100MHz
DC Rated Voltage
30V
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF724 Datasheet
Download the complete datasheet for Stmicroelectronics STF724 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
