N-channel SuperMESH3™ Power MOSFET featuring 950V drain-source breakdown voltage and 7.2A continuous drain current. Offers 1.35Ω maximum drain-source on-resistance. Designed for through-hole mounting in TO-220-3 package, with a maximum power dissipation of 35W. Includes Zener protection and operates within a temperature range of -55°C to 150°C. RoHS compliant with fast switching characteristics, including a 14ns turn-on delay and 23ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power35W
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Technical Specifications
Stmicroelectronics STF7N95K3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
7.2A
Drain to Source Breakdown Voltage
950V
Drain to Source Resistance
1.35R
Drain to Source Voltage (Vdss)
950V
Fall Time
23ns
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
1.031nF
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
35W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
35W
Radiation Hardening
No
Rds On Max
1.35R
RoHS Compliant
Yes
Series
SuperMESH3™
Turn-Off Delay Time
36ns
Turn-On Delay Time
14ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF7N95K3 Datasheet
Download the complete datasheet for Stmicroelectronics STF7N95K3 to view detailed technical specifications.
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