N-channel SuperMESH3™ Power MOSFET featuring 950V drain-source breakdown voltage and 7.2A continuous drain current. Offers 1.35Ω maximum drain-source on-resistance. Designed for through-hole mounting in TO-220-3 package, with a maximum power dissipation of 35W. Includes Zener protection and operates within a temperature range of -55°C to 150°C. RoHS compliant with fast switching characteristics, including a 14ns turn-on delay and 23ns fall time.
Stmicroelectronics STF7N95K3 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7.2A |
| Drain to Source Breakdown Voltage | 950V |
| Drain to Source Resistance | 1.35R |
| Drain to Source Voltage (Vdss) | 950V |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.4mm |
| Input Capacitance | 1.031nF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 1.35R |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 14ns |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STF7N95K3 to view detailed technical specifications.
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