N-Channel Power MOSFET, TO-220-3 package, offering 500V drain-source breakdown voltage and 5A continuous drain current. Features a low 780mΩ drain-source on-resistance at a nominal 3V gate-source voltage. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 20W. Includes a 9ns fall time and 40ns turn-off delay time, with 400pF input capacitance. This RoHS compliant component is designed for through-hole mounting.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power20W
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Technical Specifications
Stmicroelectronics STF7NM50N technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
780mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
780mR
Dual Supply Voltage
500V
Fall Time
9ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
400pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
20W
Mount
Through Hole
Nominal Vgs
3V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
20W
Rds On Max
780mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Termination
Through Hole
Turn-Off Delay Time
40ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF7NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STF7NM50N to view detailed technical specifications.
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