N-channel MDmesh™ Power MOSFET, 800V drain-to-source breakdown voltage, 6.5A continuous drain current, and 1.05 Ohm typical drain-to-source resistance. Features include 20ns turn-on delay, 35ns turn-off delay, and 10ns fall time. This through-hole component is housed in a TO-220FP package with a maximum power dissipation of 25W and an operating temperature range of -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF7NM80 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.05R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.4mm |
| Input Capacitance | 620pF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 1.05R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 20ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF7NM80 Datasheet
Download the complete datasheet for Stmicroelectronics STF7NM80 to view detailed technical specifications.
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