N-channel power MOSFET featuring 500V drain-to-source breakdown voltage and 7.5A continuous drain current. This through-hole component offers a low 560mΩ Rds On and is housed in a TO-220-3 package. Key electrical characteristics include 11ns turn-on delay and 45ns turn-off delay, with input capacitance at 570pF. Maximum power dissipation is 25W, operating between -55°C and 150°C, and is RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF9NM50N technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
7.5A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
560mR
Drain to Source Voltage (Vdss)
500V
Fall Time
19ns
Gate to Source Voltage (Vgs)
25V
Height
9.3mm
Input Capacitance
570pF
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
560mR
RoHS Compliant
Yes
Series
MDmesh™
Turn-Off Delay Time
45ns
Turn-On Delay Time
11ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF9NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STF9NM50N to view detailed technical specifications.
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