STMICROELECTRONICS

STF9NM50N

Datasheet

Stmicroelectronics

STF9NM50N

Name: STF9NM50N Stmicroelectronics
Brand: Stmicroelectronics
SKU: STF9NM50N

500V 7.5A N-CH MOSFET, 560mR Rds(on), TO-220

N-channel power MOSFET featuring 500V drain-to-source breakdown voltage and 7.5A continuous drain current. This through-hole component offers a low 560mΩ Rds On and is housed in a TO-220-3 package. Key electrical characteristics include 11ns turn-on delay and 45ns turn-off delay, with input capacitance at 570pF. Maximum power dissipation is 25W, operating between -55°C and 150°C, and is RoHS compliant.

PackageTO-220-3

MountingThrough Hole

PolarityN-CHANNEL

Power25W

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Technical Specifications

Stmicroelectronics STF9NM50N technical specifications.

General

Package/Case	TO-220-3
Continuous Drain Current (ID)	7.5A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	560mR
Drain to Source Voltage (Vdss)	500V
Fall Time	19ns
Gate to Source Voltage (Vgs)	25V
Height	9.3mm
Input Capacitance	570pF
Length	10.4mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	25W
Mount	Through Hole
Number of Elements	1
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	25W
Radiation Hardening	No
Rds On Max	560mR
RoHS Compliant	Yes
Series	MDmesh™
Turn-Off Delay Time	45ns
Turn-On Delay Time	11ns
Width	4.6mm