N-channel power MOSFET featuring 600V drain-source breakdown voltage and 6.5A continuous drain current. Offers a low 745mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package with a maximum power dissipation of 25W. Includes fast switching characteristics with turn-on delay of 28ns and fall time of 26.7ns. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STF9NM60N technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 745mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 745MR |
| Fall Time | 26.7ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 16.4mm |
| Input Capacitance | 452pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 745mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 52.5ns |
| Turn-On Delay Time | 28ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF9NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STF9NM60N to view detailed technical specifications.
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