N-channel power MOSFET featuring 600V drain-source breakdown voltage and 6.5A continuous drain current. Offers a low 745mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package with a maximum power dissipation of 25W. Includes fast switching characteristics with turn-on delay of 28ns and fall time of 26.7ns. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
Quick Jump:
Technical Specifications
Stmicroelectronics STF9NM60N technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
6.5A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
745mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
745MR
Fall Time
26.7ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
Input Capacitance
452pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
745mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
3V
Turn-Off Delay Time
52.5ns
Turn-On Delay Time
28ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STF9NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STF9NM60N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
