N-channel Power MOSFET featuring 650V drain-source voltage and 11A continuous drain current. This single-element transistor utilizes MDmesh process technology and is housed in an I2PAKFP package with 3 pins and a tab, suitable for through-hole mounting. Key specifications include a maximum gate-source voltage of ±25V, a maximum drain-source on-resistance of 455mOhm at 10V, and a maximum power dissipation of 25000mW. Operating temperature range is -55°C to 150°C.
PackageI2PAKFP
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STFI11NM65N technical specifications.
General
| Package/Case | I2PAKFP |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.4(Max) |
| Package Width (mm) | 4.6(Max) |
| Package Height (mm) | 10.85(Max) |
| Seated Plane Height (mm) | 14.1(Max) |
| Pin Pitch (mm) | 2.6(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | MDmesh |
| Maximum Drain Source Voltage | 650V |
| Maximum Gate Source Voltage | ±25V |
| Maximum Continuous Drain Current | 11A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 455@10VmOhm |
| Typical Gate Charge @ Vgs | 29@10VnC |
| Typical Gate Charge @ 10V | 29nC |
| Typical Input Capacitance @ Vds | 800@50VpF |
| Maximum Power Dissipation | 25000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SCR76 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Stmicroelectronics STFI11NM65N Datasheet
Download the complete datasheet for Stmicroelectronics STFI11NM65N to view detailed technical specifications.
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