N-channel Power MOSFET, 600V drain-source voltage, 11A continuous drain current, and 380mΩ typical drain-source resistance. Features a 650V breakdown voltage and operates within a temperature range of -55°C to 150°C. This component is housed in a TO-251-3 (I2PAKFP) package, suitable for through-hole mounting. Key switching characteristics include a 9.5ns fall time, 11ns turn-on delay, and 41ns turn-off delay. RoHS compliant.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STFI13N60M2 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 9.5ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 10.8mm |
| Input Capacitance | 580pF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 380mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 11ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STFI13N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STFI13N60M2 to view detailed technical specifications.
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