N-channel enhancement mode power MOSFET featuring SuperMESH process technology. This single-element transistor offers a maximum drain-source voltage of 950V and a continuous drain current of 10A. Housed in an I2PAKFP package with 3 pins and a tab, it supports through-hole mounting. Key electrical characteristics include a maximum gate-source voltage of ±30V and a maximum drain-source on-resistance of 850 mOhm at 10V. Maximum power dissipation is rated at 40000 mW, with an operating temperature range from -55°C to 150°C.
PackageI2PAKFP
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STFI13N95K3 technical specifications.
General
| Package/Case | I2PAKFP |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.4(Max) |
| Package Width (mm) | 4.6(Max) |
| Package Height (mm) | 10.85(Max) |
| Seated Plane Height (mm) | 14.1(Max) |
| Pin Pitch (mm) | 2.6(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | SuperMESH |
| Maximum Drain Source Voltage | 950V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 10A |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Drain Source Resistance | 850@10VmOhm |
| Typical Gate Charge @ Vgs | 51@10VnC |
| Typical Gate Charge @ 10V | 51nC |
| Typical Input Capacitance @ Vds | 1620@100VpF |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SCR76 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Stmicroelectronics STFI13N95K3 Datasheet
Download the complete datasheet for Stmicroelectronics STFI13N95K3 to view detailed technical specifications.
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