N-channel Power MOSFET featuring 650V drain-to-source breakdown voltage and 11A continuous drain current. This device offers a low 308mΩ typical drain-to-source resistance, with a maximum of 340mΩ. Operating within a -55°C to 150°C temperature range, it is housed in a TO-262-3 (I2PAKFP) through-hole package. Key switching characteristics include a 30ns turn-on delay and 11ns fall time.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STFI15N65M5 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 308mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 10.85mm |
| Input Capacitance | 816pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 340mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 12.5ns |
| Turn-On Delay Time | 30ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STFI15N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STFI15N65M5 to view detailed technical specifications.
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