PackageTO-262-3
Resistance0.25R
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STFI20NM65N technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 710V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.28nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 270mR |
| Resistance | 0.25R |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.079014oz |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STFI20NM65N Datasheet
Download the complete datasheet for Stmicroelectronics STFI20NM65N to view detailed technical specifications.
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