Stmicroelectronics
STFI24NM60N
N-channel 600 V, 0.168 Ohm, 17 A, MDmesh(TM) II Power MOSFET in I2PAKFP package
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power30W
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Technical Specifications
Stmicroelectronics STFI24NM60N technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.4nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 73ns |
| Turn-On Delay Time | 11.5ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STFI24NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STFI24NM60N to view detailed technical specifications.
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