N-channel Power MOSFET featuring 650V drain-to-source breakdown voltage and 28A continuous drain current. Offers low 90mΩ typical drain-to-source resistance and 34.7W maximum power dissipation. Packaged in a TO-262-3 (I2PAKFP) through-hole mount, this RoHS compliant component boasts fast switching speeds with a 7.5ns fall time. Operates across a wide temperature range from -55°C to 150°C.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power34.7W
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Technical Specifications
Stmicroelectronics STFI34N65M5 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 7.5ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 10.85mm |
| Input Capacitance | 2.7nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 34.7W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 34.7W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 59ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STFI34N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STFI34N65M5 to view detailed technical specifications.
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