Stmicroelectronics
STFI34NM60N
N-channel 600 V, 0.092 Ohm, 29 A, MDmesh(TM) II Power MOSFET in I2PAKFP package
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power40W
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Technical Specifications
Stmicroelectronics STFI34NM60N technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 105mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 2.722nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 105mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 106ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STFI34NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STFI34NM60N to view detailed technical specifications.
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