N-channel MOSFET with 600V drain-source voltage and 34A continuous drain current. Features 88mΩ maximum drain-source on-resistance and 650V breakdown voltage. Operates within -55°C to 150°C, with 40W maximum power dissipation. Packaged in a TO-262-3 (I2PAKFP) through-hole mount. Includes fast switching characteristics with 20.5ns turn-on delay and 11ns fall time.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STFI40N60M2 technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
34A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
88mR
Drain to Source Voltage (Vdss)
600V
Fall Time
11ns
Gate to Source Voltage (Vgs)
25V
Height
10.8mm
Input Capacitance
2.5nF
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
88mR
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
96ns
Turn-On Delay Time
20.5ns
Weight
0.079014oz
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STFI40N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STFI40N60M2 to view detailed technical specifications.
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