N-channel Power MOSFET featuring SuperMESH process technology. This single, enhancement-mode transistor offers a maximum drain-source voltage of 620V and a continuous drain current of 3.8A. Housed in an I2PAKFP package with 3 pins and a tab, it supports through-hole mounting. Key electrical characteristics include a maximum gate-source voltage of ±30V and a maximum drain-source on-resistance of 2000mΩ at 10V. The component operates within a temperature range of -55°C to 150°C.
PackageI2PAKFP
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STFI4N62K3 technical specifications.
General
Package/Case
I2PAKFP
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.4(Max)
Package Width (mm)
4.6(Max)
Package Height (mm)
10.85(Max)
Seated Plane Height (mm)
14.1(Max)
Pin Pitch (mm)
2.6(Max)
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
SuperMESH
Maximum Drain Source Voltage
620V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
3.8A
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Resistance
2000@10VmOhm
Typical Gate Charge @ Vgs
22@10VnC
Typical Gate Charge @ 10V
22nC
Typical Input Capacitance @ Vds
550@50VpF
Maximum Power Dissipation
25000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STFI4N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STFI4N62K3 to view detailed technical specifications.
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