N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 6A continuous drain current. Offers 0.8 Ohm typical drain-source resistance (950mR max) and is housed in a TO-262-3 (I2PAKFP) through-hole package. Key switching characteristics include a 12ns turn-on delay and 20ns fall time. Maximum power dissipation is 25W, with operating temperatures ranging from -55°C to 150°C.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STFI8N80K5 technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
6A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
950mR
Drain to Source Voltage (Vdss)
800V
Fall Time
20ns
Gate to Source Voltage (Vgs)
30V
Height
10.85mm
Input Capacitance
450pF
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
950mR
RoHS Compliant
Yes
Series
SuperMESH5™
Turn-Off Delay Time
32ns
Turn-On Delay Time
12ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STFI8N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STFI8N80K5 to view detailed technical specifications.
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