N-channel power MOSFET featuring 650V drain-source breakdown voltage and 46A continuous drain current. Offers a low 59mΩ drain-source on-resistance, 16ns fall time, and 13ns turn-off delay. Operates with a 4V threshold voltage and 25V gate-source voltage, with 6.81nF input capacitance. Through-hole mounting in a 3-pin TO-3PF package, with 79W maximum power dissipation and RoHS compliance.
MountingThrough Hole
PolarityN-CHANNEL
Power79W
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Technical Specifications
Stmicroelectronics STFW60N65M5 technical specifications.
General
Continuous Drain Current (ID)
46A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
59mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
59MR
Fall Time
16ns
Gate to Source Voltage (Vgs)
25V
Height
26.7mm
Input Capacitance
6.81nF
Lead Free
Lead Free
Length
15.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
79W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
79W
Radiation Hardening
No
Rds On Max
59mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ V
Threshold Voltage
4V
Turn-Off Delay Time
13ns
Turn-On Delay Time
90ns
Width
5.7mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STFW60N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STFW60N65M5 to view detailed technical specifications.
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