N-channel power MOSFET featuring 650V drain-source breakdown voltage and 46A continuous drain current. Offers a low 59mΩ drain-source on-resistance, 16ns fall time, and 13ns turn-off delay. Operates with a 4V threshold voltage and 25V gate-source voltage, with 6.81nF input capacitance. Through-hole mounting in a 3-pin TO-3PF package, with 79W maximum power dissipation and RoHS compliance.
MountingThrough Hole
PolarityN-CHANNEL
Power79W
Quick Jump:
Technical Specifications
Stmicroelectronics STFW60N65M5 technical specifications.
General
| Continuous Drain Current (ID) | 46A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 59mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 59MR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 26.7mm |
| Input Capacitance | 6.81nF |
| Lead Free | Lead Free |
| Length | 15.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 79W |
| Radiation Hardening | No |
| Rds On Max | 59mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 90ns |
| Width | 5.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STFW60N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STFW60N65M5 to view detailed technical specifications.
No datasheet is available for this part.