N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 58A continuous drain current. Offers low 45mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-3PF package, this component operates within a -55°C to 150°C temperature range. Key specifications include 70W power dissipation and 6.42nF input capacitance.
MountingThrough Hole
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STFW69N65M5 technical specifications.
General
Continuous Drain Current (ID)
58A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
45mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
45mR
Gate to Source Voltage (Vgs)
25V
Height
26.7mm
Input Capacitance
6.42nF
Lead Free
Lead Free
Length
15.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
79W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
45mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
102ns
Turn-On Delay Time
102ns
Width
5.7mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STFW69N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STFW69N65M5 to view detailed technical specifications.
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