The STFW6N120K3 is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 1.2kV and a continuous drain current of 6A. It has a maximum drain to source resistance of 2.4R and a maximum power dissipation of 63W. The device is packaged in a TO-3PF package and is suitable for operation over a temperature range of -55°C to 150°C. The STFW6N120K3 is RoHS compliant and lead free.
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Stmicroelectronics STFW6N120K3 technical specifications.
General
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 2.4R |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Drain-source On Resistance-Max | 2.4R |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.05nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 2.4R |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Turn-Off Delay Time | 58ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STFW6N120K3 Datasheet
Download the complete datasheet for Stmicroelectronics STFW6N120K3 to view detailed technical specifications.
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