Stmicroelectronics
STFW6N120K3
N-channel 1200 V, 1.95 Ohm, 6 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-3PF package
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Stmicroelectronics STFW6N120K3 technical specifications.
General
Continuous Drain Current (ID)
6A
Drain to Source Breakdown Voltage
1.2kV
Drain to Source Resistance
2.4R
Drain to Source Voltage (Vdss)
1.2kV
Drain-source On Resistance-Max
2.4R
Fall Time
32ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.05nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
63W
Mount
Through Hole
Number of Elements
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
150W
Radiation Hardening
No
Rds On Max
2.4R
RoHS Compliant
Yes
Series
SuperMESH3™
Turn-Off Delay Time
58ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STFW6N120K3 Datasheet
Download the complete datasheet for Stmicroelectronics STFW6N120K3 to view detailed technical specifications.
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