N-channel Insulated Gate Bipolar Transistor (IGBT) module featuring a 600V collector-emitter breakdown voltage and a 19A current rating. This device offers a maximum collector current of 19A and a collector-emitter voltage of 600V, with a low saturation voltage of 2.5V. Designed for chassis mount and through-hole applications, it operates within a temperature range of -40°C to 150°C and boasts a maximum power dissipation of 56W. Key switching characteristics include a turn-on delay time of 18.5ns and a turn-off delay time of 72ns.
PackageModule
Current Rating19A
MountingChassis Mount, Through Hole
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Technical Specifications
Stmicroelectronics STG3P2M10N60B technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
600V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Current Rating
19A
Height
12.2mm
Input
Single Phase Bridge Rectifier
Input Capacitance
720pF
Lead Free
Lead Free
Length
40.8mm
Max Collector Current
19A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
56W
Mount
Chassis Mount, Through Hole
NTC Thermistor
No
Package Quantity
15
Packaging
Bulk
Radiation Hardening
No
RoHS Compliant
Yes
Series
SEMITOP®
Turn-Off Delay Time
72ns
Turn-On Delay Time
18.5ns
DC Rated Voltage
600V
Width
28.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STG3P2M10N60B Datasheet
Download the complete datasheet for Stmicroelectronics STG3P2M10N60B to view detailed technical specifications.
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