Automotive-grade Insulated Gate Bipolar Transistor (IGBT) featuring a 410V breakdown voltage and 20A continuous collector current. This surface-mount device, housed in a D2PAK package, offers a maximum collector-emitter saturation voltage of 1.2V and a maximum power dissipation of 150W. Operating across a wide temperature range from -55°C to 175°C, it is lead-free and RoHS compliant.
PackageD2PAK
Current Rating20A
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STGB10NB40LZT4 technical specifications.
General
| Package/Case | D2PAK |
| Collector Emitter Breakdown Voltage | 440V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 380V |
| Collector-emitter Voltage-Max | 1.8V |
| Continuous Collector Current | 20A |
| Current Rating | 20A |
| Height | 4.6mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Breakdown Voltage | 440V |
| Max Collector Current | 20A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| DC Rated Voltage | 18V |
| Weight | 0.079014oz |
| Width | 9.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGB10NB40LZT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGB10NB40LZT4 to view detailed technical specifications.
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