N-channel Insulated Gate Bipolar Transistor (IGBT) with a 600V collector-emitter breakdown voltage and 29A maximum collector current. Features a low 1.7V collector-emitter saturation voltage and 80W power dissipation. Packaged in a TO-263-3 (DPAK) surface-mount package, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-263-3
Current Rating10A
MountingSurface Mount
Power80W
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Technical Specifications
Stmicroelectronics STGB10NB60ST4 technical specifications.
General
Package/Case
TO-263-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.7V
Collector Emitter Voltage (VCEO)
1.7V
Collector-emitter Voltage-Max
1.75V
Continuous Drain Current (ID)
10A
Current Rating
10A
Drain to Source Voltage (Vdss)
600V
Input Type
STANDARD
Lead Free
Lead Free
Max Breakdown Voltage
600V
Max Collector Current
29A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
80W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Power Dissipation
80W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerMESH™
Termination
SMD/SMT
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGB10NB60ST4 Datasheet
Download the complete datasheet for Stmicroelectronics STGB10NB60ST4 to view detailed technical specifications.
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