N-channel Insulated Gate Bipolar Transistor (IGBT) with a 600V collector-emitter breakdown voltage and 29A maximum collector current. Features a low 1.7V collector-emitter saturation voltage and 80W power dissipation. Packaged in a TO-263-3 (DPAK) surface-mount package, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-263-3
Current Rating10A
MountingSurface Mount
Power80W
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Technical Specifications
Stmicroelectronics STGB10NB60ST4 technical specifications.
General
| Package/Case | TO-263-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.7V |
| Collector Emitter Voltage (VCEO) | 1.7V |
| Collector-emitter Voltage-Max | 1.75V |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Voltage (Vdss) | 600V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 29A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Termination | SMD/SMT |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGB10NB60ST4 Datasheet
Download the complete datasheet for Stmicroelectronics STGB10NB60ST4 to view detailed technical specifications.
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