600V, 25A Insulated Gate Bipolar Transistor (IGBT) in a D2PAK surface-mount package. Features a maximum collector-emitter voltage of 600V, a collector-emitter saturation voltage of 2.1V, and a maximum collector current of 25A. Offers 80W power dissipation with a maximum operating temperature of 150°C. This RoHS compliant component is supplied on tape and reel.
PackageD2PAK
Current Rating25A
MountingSurface Mount
Power80W
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Technical Specifications
Stmicroelectronics STGB14NC60KDT4 technical specifications.
General
| Package/Case | D2PAK |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 25A |
| Height | 4.6mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 25A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| Reverse Recovery Time | 37ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| DC Rated Voltage | 600V |
| Width | 9.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGB14NC60KDT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGB14NC60KDT4 to view detailed technical specifications.
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