600V, 25A Insulated Gate Bipolar Transistor (IGBT) in a D2PAK surface-mount package. Features a maximum collector-emitter voltage of 600V, a collector-emitter saturation voltage of 2.1V, and a maximum collector current of 25A. Offers 80W power dissipation with a maximum operating temperature of 150°C. This RoHS compliant component is supplied on tape and reel.
PackageD2PAK
Current Rating25A
MountingSurface Mount
Power80W
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Technical Specifications
Stmicroelectronics STGB14NC60KDT4 technical specifications.
General
Package/Case
D2PAK
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.1V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Current Rating
25A
Height
4.6mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.4mm
Max Breakdown Voltage
600V
Max Collector Current
25A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
80W
Mount
Surface Mount
Package Quantity
1000
Packaging
Tape and Reel
Power Dissipation
80W
Radiation Hardening
No
Reverse Recovery Time
37ns
RoHS Compliant
Yes
Series
PowerMESH™
DC Rated Voltage
600V
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGB14NC60KDT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGB14NC60KDT4 to view detailed technical specifications.
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