N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V collector-emitter breakdown voltage and a 25A continuous drain current. This surface-mount device, housed in a D2PAK package, offers a maximum power dissipation of 80W and a collector-emitter saturation voltage of 2.5V. Designed for high-frequency switching applications, it boasts turn-on delay time of 22.5ns and turn-off delay time of 116ns. RoHS compliant and operating within a temperature range of -55°C to 150°C.
PackageD2PAK
Current Rating14A
MountingSurface Mount
Power80W
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Technical Specifications
Stmicroelectronics STGB14NC60KT4 technical specifications.
General
Package/Case
D2PAK
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Continuous Drain Current (ID)
25A
Current Rating
14A
Drain to Source Voltage (Vdss)
600V
Input Type
STANDARD
Lead Free
Lead Free
Max Breakdown Voltage
600V
Max Collector Current
25A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
80W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Power Dissipation
80W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerMESH™
Termination
SMD/SMT
Turn-Off Delay Time
116ns
Turn-On Delay Time
22.5ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGB14NC60KT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGB14NC60KT4 to view detailed technical specifications.
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