N-channel Insulated Gate Bipolar Transistor (IGBT) chip for surface mount applications. Features a 600V collector-emitter voltage and 40A continuous collector current. Housed in a D2PAK (TO-263) package with gull-wing leads, offering a 3-pin configuration. Maximum power dissipation is 130000mW, with a typical collector-emitter saturation voltage of 1.8V. Operates across a wide temperature range from -55°C to 150°C.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STGB19NC60HT4 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-263 |
| Package/Case | D2PAK |
| Package Description | Double Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.4(Max) |
| Package Width (mm) | 9.35(Max) |
| Package Height (mm) | 4.6(Max) |
| Seated Plane Height (mm) | 4.83(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Continuous Collector Current | 40A |
| Maximum Power Dissipation | 130000mW |
| Typical Collector Emitter Saturation Voltage | 1.8V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SCR76 |
| EU RoHS | Yes with Exemption |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Stmicroelectronics STGB19NC60HT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGB19NC60HT4 to view detailed technical specifications.
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