N-channel Insulated Gate Bipolar Transistor (IGBT) chip for surface mount applications. Features a 600V collector-emitter voltage and 40A continuous collector current. Housed in a D2PAK (TO-263) package with gull-wing leads, offering a 3-pin configuration. Maximum power dissipation is 130000mW, with a typical collector-emitter saturation voltage of 1.8V. Operates across a wide temperature range from -55°C to 150°C.
PackageD2PAK
MountingSurface Mount
Quick Jump:
Technical Specifications
Stmicroelectronics STGB19NC60HT4 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-263
Package/Case
D2PAK
Package Description
Double Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.4(Max)
Package Width (mm)
9.35(Max)
Package Height (mm)
4.6(Max)
Seated Plane Height (mm)
4.83(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±20V
Maximum Continuous Collector Current
40A
Maximum Power Dissipation
130000mW
Typical Collector Emitter Saturation Voltage
1.8V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU
Datasheet
Stmicroelectronics STGB19NC60HT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGB19NC60HT4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.