The STGB20NB32LZT4 is a 28V insulated gate bipolar transistor with a maximum collector current of 40A and a power dissipation of 150W. It is designed for surface mount applications and has a maximum operating temperature of 150°C. The device is RoHS compliant and available in a tape and reel packaging with a quantity of 1000 units. The STGB20NB32LZT4 is suitable for use in a variety of applications, including power supplies and motor control systems.
MountingSurface Mount
Power150W
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Technical Specifications
Stmicroelectronics STGB20NB32LZT4 technical specifications.
General
| Collector Emitter Breakdown Voltage | 28V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector-emitter Voltage-Max | 2V |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | STGB20NB32LZ |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGB20NB32LZT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGB20NB32LZT4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.