The STGB20NC60VT4 is a 600V insulated gate bipolar transistor (IGBT) packaged in a D2PAK-3 surface mount package. It has a maximum collector current of 60A and a maximum power dissipation of 200W. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. It is suitable for use in high-power applications such as motor drives and power supplies.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STGB20NC60VT4 technical specifications.
General
| Package/Case | D2PAK |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 60A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGB20NC60VT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGB20NC60VT4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.